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savantic semiconductor product specification silicon pnp power transistors 2SA877 2sa878 description with to-3 package high power dissipation applications power amplifier applications recommended for high-power high-fidelity audio frequency amplifier output stage pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2SA877 -80 v cbo collector-base voltage 2sa878 open emitter -120 v 2SA877 -80 v ceo collector-emitter voltage 2sa878 open base -120 v v ebo emitter-base voltage open collector -6 v i c collector current -10 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SA877 2sa878 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SA877 -80 v (br)ceo collector-emitter breakdown voltage 2sa878 i c =-0.1a ;i b =0 -120 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -6 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -2.0 v 2SA877 v cb =-80v; i e =0 i cbo collector cut-off current 2sa878 v cb =-120v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-6v; i c =0 -0.1 ma h fe dc current gain i c =-3a ; v ce =-4v 50 c ob output capacitance i e =0 ; v cb =-10v; f=1.0mhz 255 pf f t transition frequency i c =-1a ; v ce =-12v 15 mhz downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SA877 2sa878 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm) downloaded from: http:///

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